Current Issue : January-March Volume : 2026 Issue Number : 1 Articles : 5 Articles
The increasing demand for high-performance and low-power hardware in artificial intelligence (AI) applications—such as speech recognition, facial recognition, and object detection—has driven the exploration of advanced memory designs. Convolutional neural networks (CNNs) and deep neural networks (DNNs) require intensive computational resources, leading to significant challenges in terms of memory access time and power consumption. Compute-in-Memory (CIM) architectures have emerged as an alternative by executing computations directly within memory arrays, thereby reducing the expensive data transfer between memory and processor units. In this work, we present a 6T SRAM-based CIM architecture implemented using FinFET technology, aiming to reduce both power consumption and access delay. We explore and simulate three different SRAM cell structures—PLNA (P-Latch N-Access), NLPA (N-Latch P-Access), and SE (Single- Ended)—to assess their suitability for CIM operations. Compared to a reference 10T XNOR-based CIM design, our results show that the proposed structures achieve an average power consumption approximately 70% lower, along with significant delay reduction, without compromising functional integrity. A comparative analysis is presented to highlight the trade-offs between the three configurations, providing insights into their potential applications in low-power AI accelerator design....
This study investigates the effects and mechanisms of high-power microwave on GaN HEMTs. By injecting high-power microwave from the gate into the device and employing techniques such as DC characteristics, gate-lag effect analysis, low-frequency noise measurement, and focused ion beam (FIB) cross-sectional inspection, a systematic investigation was conducted on GaN HEMT degradation and failure behaviors under conditions of a low duty cycle and narrow pulse width. Experimental results indicate that under relatively low-power HPM stress, GaN HEMT exhibits only a slight threshold voltage shift and a modest increase in transconductance, attributed to the passivation of donor-like defects near the gate. However, when the injected power exceeds 43 dBm, the electric field beneath the gate triggers avalanche breakdown, forming a leakage path and causing localized heat accumulation, which ultimately leads to permanent device failure. This study reveals the physical failure mechanisms of GaN HEMTs under low-duty-cycle HPM stress and provides important guidance for the reliability design and hardening protection of RF devices....
In this study, AlGaN/GaN heterostructure field-effect transistors (HFETs) with an AlN cap layer and a GaN cap layer were fabricated. The devices were of different sizes. Capacitance– voltage (C-V) and current–voltage (I-V) curves were measured. Based on two-dimensional (2D) scattering theory, electron mobility corresponding to polarization Coulomb field (PCF) scattering and other primary scattering mechanisms was quantitatively determined. The influence of the AlN cap layer on PCF scattering in AlGaN/GaN HFETs was studied. It was found that the AlN cap layer suppresses the inverse piezoelectric effect (IPE) in the AlGaN barrier layer because of its greater polarization and larger Young’s modulus, thereby reducing the generation of additional polarization charge (APC) under the gate. In addition, the 2D electron gas (2DEG) density (n2DEG) under the gate of the samples with an AlN cap layer is higher. Both factors help reduce PCF scattering intensity. Moreover, mobility analysis of samples with different gate–drain spacings (LGD) showed that PCF scattering is less affected by LGD variations in devices with AlN cap layers. This study offers new insights into the structural optimization of AlGaN/GaN HFETs....
This study investigates the influence of post-deposition thermal annealing temperature on the crystal structure, chemical composition, and electrical performance of solutionprocessed indium oxide (In2O3) thin films. Based on thermogravimetric analysis (TGA) of the precursor solution, annealing temperatures of 350, 450, and 550 ◦C were adopted. The resulting In2O3 films were characterized using ultraviolet–visible (UV–Vis) spectroscopy, atomic force microscopy (AFM), Raman spectroscopy, and Hall-effect measurements to evaluate their optical, morphological, crystalline polymorphism, and electrical properties. The results revealed that the film annealed at 450 ◦C exhibited a field-effect mobility of 4.28 cm2/V·s and an on/off current ratio of 2.15 × 107. The measured hysteresis voltages were 3.11, 1.80, and 0.92 V for annealing temperatures of 350, 450, and 550 ◦C, respectively. Altogether, these findings indicate that an annealing temperature of 450 ◦C provides an optimal balance between the electrical performance and device stability for In2O3- based thin-film transistors (TFTs), making this condition favourable for high-performance oxide electronics....
A radiation-hardened RCC (Ring Choke Converter) isolated power supply design is proposed, which provides an innovative solution to the challenge of providing stable power to the PWM controller in DC-DC converters under nuclear radiation environments. By optimizing circuit architecture and component selection, and incorporating transformer isolation and dynamic parameter compensation technology, the RCC maintains an 8.9 V output voltage after exposure to neutron irradiation of 3 × 1013 n/cm2, signicantly outperforming conventional designs with a failure threshold of 1 × 1013 n/cm2. For the rst time, the degradation mechanisms of VDMOS devices under neutron irradiation during switching operations are systematically revealed: a 32–36% reduction in threshold voltage (with the main power transistor dropping from 5 V to 3.4 V) and an increase in on-resistance. Based on these ndings, a selection criterion for power transistors is established, enabling the power supply to achieve a 2 W output in extreme environments such as nuclear power plant monitoring and satellite systems. The results provide a comprehensive solution for radiation-hardened power electronics systems, covering device characteristic analysis to circuit optimization, with signicant engineering application value....
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